@@ -75,10 +75,10 @@ def bishop88(diode_voltage, photocurrent, saturation_current,
7575 .. warning::
7676 * Do not use ``d2mutau`` with CEC coefficients.
7777 * Usage of ``d2mutau`` with PVSyst coefficients is required for CdTe and
78- a:Si modules.
79- * For PVSyst CdTe and a:Si modules, the cells_in_series parameter must
80- only account for a single parallel sub-string if the module has cells in
81- parallel greater than 1.
78+ a:Si modules.
79+ * For PVSyst CdTe and a:Si modules, the `` cells_in_series`` parameter
80+ must only account for a single parallel sub-string if the module has
81+ cells in parallel greater than 1.
8282
8383 Parameters
8484 ----------
@@ -96,12 +96,13 @@ def bishop88(diode_voltage, photocurrent, saturation_current,
9696 product of thermal voltage ``Vth`` [V], diode ideality factor ``n``,
9797 and number of series cells ``Ns``
9898 cells_in_series : int
99- number of cells in series per parallel module sub-string, if unset
100- default is ``None`` which raises ``TypeError`` if ``d2mutau`` is set.
99+ number of cells in series per parallel module sub-string, only required
100+ for PVSyst thin-film recombination loss, if unset default is ``None``
101+ which raises ``TypeError`` if ``d2mutau`` is set.
101102 d2mutau : numeric
102103 PVSyst thin-film recombination parameter that is the ratio of thickness
103104 of the intrinsic thin-film layer squared :math:`d^2` and the diffusion
104- length of charge carriers :math:`\mu \t au`, in volts [V], defaults to
105+ length of charge carriers :math:`\\ mu \ \ tau`, in volts [V], defaults to
105106 0[V]
106107 voltage_builtin : numeric
107108 PVSyst thin-film recombination parameter that is the builtin voltage of
@@ -122,7 +123,7 @@ def bishop88(diode_voltage, photocurrent, saturation_current,
122123 The PVSyst thin-film recombination losses parameters ``d2mutau`` and
123124 ``voltage_builtin`` are only applied to cadmium-telluride (CdTe) and
124125 amorphous-silicon (a:Si) PV modules, [2]_, [3]_. The builtin voltage should
125- account for all junctions. _EG_ : tandem and triple junction cell would have
126+ account for all junctions. *EG* : tandem and triple junction cell would have
126127 builtin voltages of 1.8[V] and 2.7[V] respectively, based on the default of
127128 0.9[V] for a single junction.
128129
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